JPH0115959B2 - - Google Patents

Info

Publication number
JPH0115959B2
JPH0115959B2 JP55007389A JP738980A JPH0115959B2 JP H0115959 B2 JPH0115959 B2 JP H0115959B2 JP 55007389 A JP55007389 A JP 55007389A JP 738980 A JP738980 A JP 738980A JP H0115959 B2 JPH0115959 B2 JP H0115959B2
Authority
JP
Japan
Prior art keywords
volatile memory
floating gate
memory cell
volatile
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55007389A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55101192A (en
Inventor
Toomasu Shimuko Richaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xicor LLC
Original Assignee
Xicor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/006,029 external-priority patent/US4300212A/en
Application filed by Xicor LLC filed Critical Xicor LLC
Publication of JPS55101192A publication Critical patent/JPS55101192A/ja
Publication of JPH0115959B2 publication Critical patent/JPH0115959B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
JP738980A 1979-01-24 1980-01-24 Method and unit for nonnvolatile memory Granted JPS55101192A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/006,029 US4300212A (en) 1979-01-24 1979-01-24 Nonvolatile static random access memory devices

Publications (2)

Publication Number Publication Date
JPS55101192A JPS55101192A (en) 1980-08-01
JPH0115959B2 true JPH0115959B2 (en]) 1989-03-22

Family

ID=21718940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP738980A Granted JPS55101192A (en) 1979-01-24 1980-01-24 Method and unit for nonnvolatile memory

Country Status (8)

Country Link
JP (1) JPS55101192A (en])
KR (1) KR830001767B1 (en])
BE (1) BE881329A (en])
DE (1) DE3002492A1 (en])
FR (1) FR2447587B1 (en])
GB (1) GB2042296B (en])
NL (1) NL192015C (en])
SE (1) SE8000392L (en])

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
WO1980001965A1 (en) * 1979-03-13 1980-09-18 Ncr Co Static volatile/non-volatile ram system
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
JPS5792490A (en) * 1980-11-29 1982-06-09 Toshiba Corp Semiconductor storage device
JPS5792865A (en) * 1980-11-29 1982-06-09 Toshiba Corp Manufacture of semiconductor memory device
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPS60185297A (ja) * 1984-03-02 1985-09-20 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
JPH0638502B2 (ja) * 1984-06-13 1994-05-18 セイコー電子工業株式会社 不揮発性ｒａｍ
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
JPH07120716B2 (ja) * 1985-03-30 1995-12-20 株式会社東芝 半導体記憶装置
JPS61225860A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
JPH01214993A (ja) * 1988-02-23 1989-08-29 Nissan Motor Co Ltd データ記憶装置
DE10211337B4 (de) * 2002-03-14 2009-12-31 Infineon Technologies Ag Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070655A (en) * 1976-11-05 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Virtually nonvolatile static random access memory device
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit

Also Published As

Publication number Publication date
NL192015B (nl) 1996-08-01
FR2447587A1 (fr) 1980-08-22
GB2042296A (en) 1980-09-17
NL192015C (nl) 1996-12-03
FR2447587B1 (fr) 1986-02-28
BE881329A (fr) 1980-05-16
DE3002492A1 (de) 1980-07-31
GB2042296B (en) 1983-05-11
NL8000435A (nl) 1980-07-28
KR830001767B1 (ko) 1983-09-03
JPS55101192A (en) 1980-08-01
DE3002492C2 (en]) 1990-12-20
SE8000392L (sv) 1980-07-25

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